CP3 Lunch -Simulation of electrical parameters of new design of super-LHC silicon sensors for large radii - Otilia Militaru

by Dr Otilia Militaru (CP3 - UCL)

Wednesday 10 Jun 2009, 13:00 → 13:50 Europe/Brussels

Cycl.06

For the very high luminosity phase of the SLHC, about 300 tracks are expected; therefore a tracking system with a very high granularity is mandatory. As a result of the high luminosity the sensors will have to withstand an extreme radiation environment of up to 10^16 n/cm^2 . On this basis, a new geometry with short silicon strip sensors (strixels) is proposed. In order to understand the behaviour of such devices, test geometries are developed whose performance can be verified and optimized using simulation of semiconductor structures. We used the TCAD-ISE (SYNOPSYS package) software in order to simulate the main electrical parameters of different strip geometries, including a double metal layer, for p-in-n and n-in-p type wafers and to foresee their evolution in a radiation environment. Several corresponding simulations to make these developments possible are described.