CP3 Lunch - laser methodology to determine the Burnout susceptibility of power MOSFETs - Aurore Luu

by Dr Aurore Luu (EADS France)

Wednesday 19 Nov 2008, 13:00 → 13:50 Europe/Brussels

Cycl.06 (Cycl.06)

Validation of the methodology based upon backside laser irradiation to characterize the susceptibility of power MOSFETs towards Single-Event Burnout is presented. This validation is done with high-energy heavy ion testing and device simulations. Advantages of the laser, such as mappings of sensitivity and sensitive volume definition are shown. (EADS France - Innovation Works CTO/IW/SI/NR - Natural Radiation Environment Research Team)